Highly boron doped diamond films were produced using Blue Wave HFCVD reactor over 2” silicon wafers. The morphology and structure of the boron doped diamond films were evaluated by scanning electron microscopy, x-ray diffraction and Raman spectroscopy. The electrical transport measurement show that the boron doped HFCVD diamond film is superconducting with the superconducting transition temperatures of 5 K for Tc onset and 3.0K for zero resistance.